quick-access memory - definition. What is quick-access memory
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%ما هو (من)٪ 1 - تعريف

SHARED MEMORY ARCHITECTURE USED IN PARALLEL COMPUTERS, WHERE ALL PROCESSORS SHARE THE PHYSICAL MEMORY UNIFORMLY
Uniform Memory Access; Heterogenous Unified Memory Access

shadow ram         
  • VEB Carl Zeiss Jena]] in 1989
  • DRAM Cell (1 Transistor and one capacitor)
  • These IBM [[tabulating machine]]s from the mid-1930s used [[mechanical counter]]s to store information
  • heatsink]]
  • SRAM Cell (6 Transistors)
  • desktop RAM]].
  • server]]s.
FORM OF COMPUTER DATA STORAGE
R.A.M.; Shadow Random Access Memory; Memory wall; Shadow ram; Shadow RAM; Shadow random access memory; Random-Access Memory; RAM chip; Random Access Memory; RAM (memory); Sigmaquad; Random access memory; Single sided RAM; Single-sided RAM; Single sided random access memory; Single-sided random access memory; RAM memory; Computer RAM memory; RAM; Memory bottleneck; History of random-access memory; RAM IC; RAM stick
<operating system> A memory area in PC-AT compatibles used to store frequently accessed ROM code to speed up operation. (1995-01-16)
random-access memory         
  • VEB Carl Zeiss Jena]] in 1989
  • DRAM Cell (1 Transistor and one capacitor)
  • These IBM [[tabulating machine]]s from the mid-1930s used [[mechanical counter]]s to store information
  • heatsink]]
  • SRAM Cell (6 Transistors)
  • desktop RAM]].
  • server]]s.
FORM OF COMPUTER DATA STORAGE
R.A.M.; Shadow Random Access Memory; Memory wall; Shadow ram; Shadow RAM; Shadow random access memory; Random-Access Memory; RAM chip; Random Access Memory; RAM (memory); Sigmaquad; Random access memory; Single sided RAM; Single-sided RAM; Single sided random access memory; Single-sided random access memory; RAM memory; Computer RAM memory; RAM; Memory bottleneck; History of random-access memory; RAM IC; RAM stick
<storage> (RAM) (Previously "direct-access memory"). A data storage device for which the order of access to different locations does not affect the speed of access. This is in contrast to, say, a magnetic disk, magnetic tape or a mercury delay line where it is very much quicker to access data sequentially because accessing a non-sequential location requires physical movement of the storage medium rather than just electronic switching. In the 1970s magnetic core memory was used and some old-timers still call RAM "core". The most common form of RAM in use today is semiconductor integrated circuits, which can be either static random-access memory (SRAM) or {dynamic random-access memory} (DRAM). The term "RAM" has gained the additional meaning of read-write. Most kinds of semiconductor read-only memory (ROM) are actually "random access" in the above sense but are never referred to as RAM. Furthermore, memory referred to as RAM can usually be read and written equally quickly (approximately), in contrast to the various kinds of programmable read-only memory. Finally, RAM is usually volatile though non-volatile random-access memory is also used. Interestingly, some DRAM devices are not truly random access because various kinds of "page mode" or "column mode" mean that sequential access is faster than random access. The humorous expansion "Rarely Adequate Memory" refers to the fact that programs and data always seem to expand to fill the memory available. (2007-10-12)
MDRAM         
  • [[MoSys]] MDRAM MD908
  • accessdate=2022-03-09}}</ref> (lower edge, right of middle).
  • 1 Mbit high speed [[CMOS]] pseudo static RAM, made by [[Toshiba]]
  • NMOS]] DRAM cell. It was patented in 1968.
  • die]] of a Samsung DDR-SDRAM 64MBit package
  • Inside a Samsung GDDR3 256&nbsp;MBit package
  • A 512 MBit [[Qimonda]] GDDR3 SDRAM package
  • Writing to a DRAM cell
RANDOM-ACCESS MEMORY THAT STORES EACH BIT OF DATA IN A SEPARATE CAPACITOR WITHIN AN INTEGRATED CIRCUIT
DRAM (memory); Pseudostatic RAM; PSRAM; Pseudostatic Random Access Memory; Window RAM; Dynamic RAM; EDO RAM; Fast Page Mode DRAM; FPM RAM; FPM DRAM; Fast Page Mode RAM; BEDO (RAM); MDRAM; Row Access Strobe; Column Access Strobe; CAS access time; Precharge interval; Row address select; Column address select; 1T DRAM; DDRAM; D-RAM; EDO DRAM; Fast page mode; Page mode memory; Extended Data Out RAM; BEDO RAM; Burst EDO; Multibank DRAM; Intel 1102; Burst EDO DRAM; Memory Timing; Dynamic Random Access Memory; FPRAM; Dynamic random access memory; Extended data out DRAM; Extended Data Out DRAM; Dynamic Random access memory; Static column RAM; Memory row; DRAM row; Row activation; WRAM (memory); 1T1C; 1t1c; 3T1C; Page mode RAM; Page mode DRAM; DRAM; D. R. A. M.; D.R.A.M.; DRAM memory; Asynchronous DRAM; EDO memory; Fast page mode DRAM; Window DRAM; Video DRAM; Nibble mode; EDO SGRAM
Multibank Dynamic Random Access Memory (Reference: RAM, DRAM, IC)

ويكيبيديا

Uniform memory access

Uniform memory access (UMA) is a shared memory architecture used in parallel computers. All the processors in the UMA model share the physical memory uniformly. In an UMA architecture, access time to a memory location is independent of which processor makes the request or which memory chip contains the transferred data. Uniform memory access computer architectures are often contrasted with non-uniform memory access (NUMA) architectures. In the NUMA architecture, each processor may use a private cache. Peripherals are also shared in some fashion. The UMA model is suitable for general purpose and time sharing applications by multiple users. It can be used to speed up the execution of a single large program in time-critical applications.